Attributes

Key Value
Base Product NumberFDS63
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Ta)
Drain to Source Voltage.20V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .36nC @ 4.5V
Input Capacitance (Ciss.2694pF @ 10V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm.
Part StatusActive
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 8A, 4.5V
SeriesPowerTrench?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1.5V @ 250?A
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