Panjit International Inc. PJMF990N65EC_T0_00001

mpnPJMF990N65EC_T0_00001
brandname: Panjit International Inc.
manufacturername: Panjit International Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.7A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	9.7 nC @ 10 V
Input Capacitance (Ciss.	306 pF @ 400 V
Mfr	Panjit International In.
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack, Iso.
Power Dissipation (Max)	22.5W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	990mOhm @ 2A, 10V
Series	-
Supplier Device Package	ITO-220AB-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

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