Attributes

Key Value
Base Product NumberSTP28
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .35 nC @ 10 V
Input Capacitance (Ciss.1440 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)170W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs180mOhm @ 10A, 10V
SeriesMDmesh? M2
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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