Attributes

Key Value
Base Product NumberSTW30N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.27A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .94 nC @ 10 V
Input Capacitance (Ciss.2740 pF @ 50 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusObsolete
Power Dissipation (Max)190W (Tc)
Rds On (Max) @ Id, Vgs115mOhm @ 13.5A, 10V
SeriesMDmesh? II
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759959067.3438