Toshiba Semiconductor and Storage TK31E60X,S1X

mpnTK31E60X,S1X
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TC74HC08
Category	Discrete Semiconductor .
Current - Continuous Dr.	30.8A (Ta)
Drain to Source Voltage.	600V
Drive Voltage (Max Rds .	10V
FET Feature	Super Junction
FET Type	N-Channel
Gate Charge (Qg) (Max) .	65nC @ 10V
Input Capacitance (Ciss.	3000pF @ 300V
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	230W (Tc)
Rds On (Max) @ Id, Vgs	88mOhm @ 9.4A, 10V
Series	DTMOSIV-H
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.5V @ 1.5mA

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