Infineon Technologies IPD088N06N3GBTMA1

B07PRDS7JP

IPD088N06N3GBTMA1, Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R (25 Items)

IPD088N06N3GBTMA1, Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R (25 Items)zoom

Attributes

Key Value
Base Product NumberIPD088
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .48 nC @ 10 V
Input Capacitance (Ciss.3900 pF @ 30 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)71W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs8.8mOhm @ 50A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 34?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics10602470.426250025Infineon0.426 @ 2500
RS Delivers165-59660.5388125Infineon0.5388 @ 25
Digi-Key20810021.07125Infineon Technologies1.07 @ 25
thumbzoomNewark50Y20241.5125INFINEON1.5 @ 25
AmazonTPB07PRDS7JP40.41252Infineon Technologies40.4 @ 25
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