Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
Drain to Source Voltage.35V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .17.3nC @ 10V
Input Capacitance (Ciss.960pF @ 20V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)1W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 5.5A, 10V
Series-
Supplier Device PackageIPAK/TP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.6V @ 1mA
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