Infineon Technologies IPB049NE7N3GATMA1

IPB049NE7N3GATMA1, Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R (25 Items)

IPB049NE7N3GATMA1, Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R (25 Items)zoom

Attributes

Key Value
Base Product NumberIPB049
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
Drain to Source Voltage.75 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .68 nC @ 10 V
Input Capacitance (Ciss.4750 pF @ 37.5 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)150W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs4.9mOhm @ 80A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.8V @ 91?A
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