Attributes

Key Value
Base Product NumberIPW65R041
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .102 nC @ 10 V
Input Capacitance (Ciss.4975 pF @ 400 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)227W (Tc)
Rds On (Max) @ Id, Vgs41mOhm @ 24.8A, 10V
SeriesCoolMOS? CFD7
Supplier Device PackagePG-TO247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 1.24mA
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