Attributes

Key Value
Base Product NumberPSMN1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .57 nC @ 10 V
Input Capacitance (Ciss.3504 pF @ 12 V
MfrNXP USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Power Dissipation (Max)141W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.05mOhm @ 25A, 10V
Series-
Supplier Device PackageLFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.95V @ 1mA
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