SILICONIX (VISHAY) SI7450DP-T1-E3

B0748MLXJK

SILICONIX (VISHAY) SI7450DP-T1-E3 Single N-Channel 200 V 1.9 W 42 nC Silicon Surface Mount Mosfet - POWERPAK-SO-8 - 3000 item(s)

SILICONIX (VISHAY) SI7450DP-T1-E3 Single N-Channel 200 V 1.9 W 42 nC Silicon Surface Mount Mosfet - POWERPAK-SO-8 - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberSI7450
CategoryDiscrete Semiconductor .
Channel TypeN
ConfigurationQuad Drain ; Triple Sou.
Current - Continuous Dr.3.2A (Ta)
Dimensions5.99 x 5 x 1.07 mm
Drain Current3.2 A
Drain to Source On Resi.0.09 Ohms
Drain to Source Voltage200 V
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Forward Transconductance19 S
Forward Voltage, Diode1.2 V
Gate Charge (Qg) (Max) .42 nC @ 10 V
Gate to Source Voltage?20 V
Height0.042" (1.07mm)
Length0.235 in
Maximum Operating Tempe.+150 ?C
MfrVishay Siliconix
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .1
Number of Pins8
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Package TypePowerPAK-SO-8
Power Dissipation1.9 W
Power Dissipation (Max)1.9W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs80mOhm @ 4A, 10V
SeriesTrenchFET?, SI74 Series
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Temperature Operating R.-55 to +150 ?C
Turn Off Delay Time32 ns
Turn On Delay Time14 ns
Typical Gate Charge @ V.34 nC @ 10 V
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
Width0 in

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18072920.936919000Vishay/Siliconix0.9369 @ 3000
Future Electronics38609211.35630003000Vishay1.356 @ 3000
us.rs-online.com700262721.630003000Siliconix / Vishay1.6 @ 3000
thumbzoomNewark06J81511.7230003000VISHAY1.72 @ 3000
Digi-Key17649611.85169613000Vishay Siliconix1.851696 @ 3000
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