STMicroelectronics STB24N60DM2

B076F8KT95

ST MICROELECTRONICS STB24N60DM2 N-Channel 600 V 0.2 Ohm SMT FDmesh II Plus Power Mosfet - D2PAK - 2 item(s)

ST MICROELECTRONICS STB24N60DM2 N-Channel 600 V 0.2 Ohm SMT FDmesh II Plus Power Mosfet - D2PAK - 2 item(s)zoom

Attributes

Key Value
Base Product NumberSTB24
CaseD2PAK
CategoryDiscrete Semiconductor .
Current - Continuous Dr.18A (Tc)
Drain current11A
Drain to Source Voltage.600 V
Drain-source voltage600V
Drive Voltage (Max Rds .10V
ECCN EUEAR99
ECCN USD2PAK
Features of semiconduct.ESD protected gate
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Gate-source voltage?25V
GradeEcopack2
Input Capacitance (Ciss.1055 pF @ 100 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerSTMicroelectronics
MfrSTMicroelectronics
MountingSMD
Mounting TypeSurface Mount
On-state resistance200m?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Package NameIndustrial
Packing TypeNEC
Polarisationunipolar
Power dissipation150W
Power Dissipation (Max)150W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs200mOhm @ 9A, 10V
RoHs compliantTape And Reel
SeriesFDmesh? II Plus
Supplier Device PackageD?PAK (TO-263)
TechnologySuperMesh?, MOSFET (Met.
Type of transistorN-MOSFET
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future ElectronicsC0133703102.1610002STMicroelectronics2.16 @ 1000
thumbzoomst.comSTB24N60DM23.312STMicroelectronics3.3 @ 2
thumbzoomNewark69AH26723.61977STMICROELECTRONICS3.6 @ 2
HotendaH18215933.712512STMicroelectronics3.7125 @ 2
thumbzoomTMESTB24N60DM24.0912STMicroelectronics4.09 @ 2
Digi-Key52371454.29612STMicroelectronics4.296 @ 2
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