Attributes

Key Value
Base Product NumberSTV250
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .100 nC @ 10 V
Input Capacitance (Ciss.6800 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerSO-10 Exposed Bott.
Power Dissipation (Max)300W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs2.2mOhm @ 75A, 10V
SeriesSTripFET? III
Supplier Device Package10-PowerSO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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