Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.9A (Ta), 12.5A (Tc)
DescriptionP-CHANNEL POWER MOSFET
Detailed DescriptionP-Channel 30 V 9.9A (Ta.
Digi-Key Part Number2156-BSC200P03LSG-ND
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .48.5 nC @ 10 V
Input Capacitance (Ciss.2430 pF @ 15 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.BSC200P03LSG
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5W (Ta), 63W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs20mOhm @ 12.5A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TDSON-8-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id1V @ 100?A
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