Infineon Technologies BSZ034N04LSATMA1

B07PQ9J729

BSZ034N04LSATMA1, Trans MOSFET N-CH 40V 19A T/R (50 Items)

BSZ034N04LSATMA1, Trans MOSFET N-CH 40V 19A T/R (50 Items)zoom

Attributes

Key Value
Base Product NumberBSZ034
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19A (Ta), 40A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Input Capacitance (Ciss.1800 pF @ 20 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Part StatusActive
Power Dissipation (Max)2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 20A, 10V
SeriesAutomotive, AEC-Q101, O.
Supplier Device PackagePG-TSDSON-8-FL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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