mpn
IPD50N06S2L13ATMA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
50A (Tc)
Drain to Source Voltage.
55 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
69 nC @ 10 V
Input Capacitance (Ciss.
1800 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-252-3, DPak (2 Leads.
Part Status
Discontinued at Digi-Key
Power Dissipation (Max)
136W (Tc)
Rds On (Max) @ Id, Vgs
12.7mOhm @ 34A, 10V
Series
OptiMOS?
Supplier Device Package
PG-TO252-3-11
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2V @ 80?A