Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.7A (Ta), 25A (Tc)
DescriptionIRF6645 - 12V-300V N-CH.
Detailed DescriptionN-Channel 100 V 5.7A (T.
Digi-Key Part Number2156-IRF6645TRPBF-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 10 V
Input Capacitance (Ciss.890 pF @ 25 V
ManufacturerInternational Rectifier
Manufacturer Product Nu.IRF6645TRPBF
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseDirectFET? Isometric SJ
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs35mOhm @ 5.7A, 10V
SeriesHEXFET?
Supplier Device PackageDIRECTFET? SJ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.9V @ 50?A
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