Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5mOhm @ 25A, 10V
Drain to Source Voltage.117nC @ 10V
FET Feature300W (Ta)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .5730pF @ 25V
MfrNXP USA Inc.
Mounting TypeI2PAK
Operating TemperatureThrough Hole
PackageActive
Package / Case40V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs4V @ 1mA
SeriesTube
Supplier Device PackageTO-262-3 Long Leads, I?.
Technology75A (Ta)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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