Attributes

Key Value
Base Product NumberSTS26
CategoryDiscrete Semiconductor .
Current - Continuous Dr.26A (Tc)
Drain to Source Voltage.30V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40nC @ 4.5V
Input Capacitance (Ciss.4040pF @ 25V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm.
Part StatusObsolete
Power Dissipation (Max)2.7W (Ta)
Rds On (Max) @ Id, Vgs4.4mOhm @ 13A, 10V
SeriesDeepGATE?, STripFET? VI
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 250?A
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