SIHB23N60E-GE3

mpnSIHB23N60E-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

VISHAY SILICONIX SIHB23N60E-GE3 MOSFET, N CH, 600V, 23A, TO-263-3 (50 pieces)

VISHAY SILICONIX SIHB23N60E-GE3 MOSFET, N CH, 600V, 23A, TO-263-3 (50 pieces)

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PartNumber: SIHB23N60E-GE3
PackageQuantity: 50
Manufacturer: VISHAY SILICONIX
Label: VISHAY SILICONIX

Attributes

Key	Value
Base Product Number	SIHB23
Category	Discrete Semiconductor .
Current - Continuous Dr.	23A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
Family Series	VISHAY
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	95 nC @ 10 V
Gross Weight	0 lbs
Input Capacitance (Ciss.	2418 pF @ 100 V
Item Number	SIHB23N60E-GE3
Manufacturer	VISHAY
Manufacturer Part Number	SIHB23N60E-GE3
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Net Weight	0 lbs
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	227W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	158mOhm @ 12A, 10V
Series	-
Supplier Device Package	D?PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Galco	SIHB23N60E-GE3-VISH	1.91	1000	52		Vishay		1.91 @ 1000
	Future Electronics	8052617	3.552	1000	52		Vishay		3.552 @ 1000
	TME	SIHB23N60E-GE3	3.58	1	52		VISHAY		3.58 @ 1
	Newark	40X8671	4.24	1	23		VISHAY		4.24 @ 1
	Digi-Key	9861006	5.16	1	52	474	Vishay Siliconix		5.16 @ 1

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