Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .151 nC @ 10 V
Input Capacitance (Ciss.9815 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)231W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.1mOhm @ 75A, 10V
SeriesPowerTrench?
Supplier Device PackageD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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