Goford Semiconductor G1K8P06S2

mpnG1K8P06S2
brandname: Goford Semiconductor
manufacturername: Goford Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Configuration	2 P-Channel
Current - Continuous Dr.	3.2A (Tc)
Drain to Source Voltage.	60V
FET Feature	Standard
Gate Charge (Qg) (Max) .	11.3nC @ 10V
Input Capacitance (Ciss.	594pF @ 30V
Mfr	Goford Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm .
Power - Max	2W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 1A, 10V
Series	-
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250?A

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