Infineon Technologies IMBG120R045M1HXTMA1

mpnIMBG120R045M1HXTMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IMBG120
Category	Discrete Semiconductor .
Current - Continuous Dr.	47A (Tc)
Drain to Source Voltage.	1200 V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) .	46 nC @ 18 V
Input Capacitance (Ciss.	1527 pF @ 800 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-8, D?Pak (7 Lead.
Part Status	Active
Power Dissipation (Max)	227W (Tc)
Rds On (Max) @ Id, Vgs	63mOhm @ 16A, 18V
Series	CoolSiC?
Supplier Device Package	PG-TO263-7-12
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+18V, -15V
Vgs(th) (Max) @ Id	5.7V @ 7.5mA

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