Attributes

Key Value
Base Product NumberAPTMC170
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.1700V (1.7kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N Channel (Phase Leg)
Gate Charge (Qg) (Max) .190nC @ 20V
Input Capacitance (Ciss.3080pF @ 1000V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP1
Part StatusActive
Power - Max350W
Rds On (Max) @ Id, Vgs60mOhm @ 50A, 20V
Series-
Supplier Device PackageSP1
Vgs(th) (Max) @ Id2.3V @ 2.5mA (Typ)
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