Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5V, 10V
Drain to Source Voltage.32nC @ 5V
Drive Voltage (Max Rds .11mOhm @ 20A, 10V
FET Feature106W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .2.88pF @ 25V
MfrNXP USA Inc.
Mounting TypeLFPAK56, Power-SO8
Operating TemperatureSurface Mount
PackageActive
Package / Case55V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs2.15V @ 1mA
SeriesBulk
Supplier Device PackageSC-100, SOT-669
Technology61.8A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?15V
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev


As an Amazon Associate I earn from qualifying purchases.

1759994246.5269