Attributes

Key Value
Base Product NumberNTLJS4
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.5A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.8 nC @ 4.5 V
Input Capacitance (Ciss.1020 pF @ 15 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-PowerWDFN
Part StatusActive
Power Dissipation (Max)860mW (Ta)
Rds On (Max) @ Id, Vgs6.1mOhm @ 10A, 4.5V
Series-
Supplier Device Package6-PQFN (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id2.1V @ 250?A
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