mpn
RD3G07BATTL1
brand
name: Rohm Semiconductor
manufacturer
name: Rohm Semiconductor
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
70A (Ta)
Drain to Source Voltage.
40 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) .
105 nC @ 10 V
Input Capacitance (Ciss.
5550 pF @ 20 V
Mfr
Rohm Semiconductor
Mounting Type
Surface Mount
Operating Temperature
150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-252-3, DPak (2 Leads.
Power Dissipation (Max)
101W (Ta)
Product Status
Active
Rds On (Max) @ Id, Vgs
7.1mOhm @ 70A, 10V
Series
-
Supplier Device Package
TO-252
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.5V @ 1mA