Toshiba Semiconductor and Storage SSM3K35CT,L3F

mpnSSM3K35CT,L3F
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3K35
Category	Discrete Semiconductor .
Current - Continuous Dr.	180mA (Ta)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.2V, 4V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss.	9.5 pF @ 3 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	SC-101, SOT-883
Power Dissipation (Max)	100mW (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Series	-
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?10V
Vgs(th) (Max) @ Id	1V @ 1mA

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