SILICONIX (VISHAY) SI4800BDY-T1-E3

B07BZQQDKY

SILICONIX (VISHAY) SI4800BDY-T1-E3 Single N-Channel 30 V 18.5 mOhm Surface Mount Power Mosfet - SOIC-8 - 25 item(s)

SILICONIX (VISHAY) SI4800BDY-T1-E3 Single N-Channel 30 V 18.5 mOhm Surface Mount Power Mosfet - SOIC-8 - 25 item(s)zoom

Attributes

Key Value
Base Product NumberSI4800
CaseSO8
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.5A (Ta)
DescriptionMOSFET N-CH 30V 6.5A 8SO
Detailed DescriptionN-Channel 30 V 6.5A (Ta.
Digi-Key Part NumberSI4800BDY-T1-E3TR-ND - .
Drain current7A
Drain to Source Voltage.30 V
Drain-source voltage30V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate charge13nC
Gate Charge (Qg) (Max) .13 nC @ 5 V
Gate-source voltage?25V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVishay Siliconix, VISHAY
Manufacturer Product Nu.SI4800BDY-T1-E3
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
MountingSMD
Mounting TypeSurface Mount
On-state resistance30m?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Polarisationunipolar
Power dissipation2.5W
Power Dissipation (Max)1.3W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs18.5mOhm @ 9A, 10V
SeriesTrenchFET?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?25V
Vgs(th) (Max) @ Id1.8V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18086870.2508517500Vishay/Siliconix0.25085 @ 50
thumbzoomNewark06J78450.278150VISHAY0.278 @ 50
Future Electronics43040930.43225005000Vishay0.432 @ 2500
ArrowSI4800BDY-T1-E30.5851245Vishay0.585 @ 50
thumbzoomDigi-Key16564670.969614589Vishay Siliconix0.9696 @ 50
AmazonSCB00LWQAS3A6.41150VISHAY6.41 @ 50
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