SI7898DP-T1-GE3-VISHAY

B011NBFJJG

VISHAY SILICONIX SI7898DP-T1-GE3 N CHANNEL MOSFET, 150V, 3A, SOIC (1 piece)

VISHAY SILICONIX SI7898DP-T1-GE3 N CHANNEL MOSFET, 150V, 3A, SOIC (1 piece)zoom

Attributes

Key Value
Alternate Part No.781-SI7898DP-T1-GE3
Base Product NumberSI7898
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
ConfigurationSingle
Current - Continuous Dr.3A (Ta)
DescriptionMOSFET N-CH 150V 3A PPA.
Detailed DescriptionN-Channel 150 V 3A (Ta).
Digi-Key Part NumberSI7898DP-T1-GE3TR-ND - .
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .6V, 10V
Fall Time10 ns
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .21 nC @ 10 V
Id - Continuous Drain C.3 A
ManufacturerVishay Siliconix, Vishay
Manufacturer Part No.SI7898DP-T1-GE3
Manufacturer Product Nu.SI7898DP-T1-GE3
Manufacturer Standard L.17 Weeks
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Package/CasePowerPAK SO-8
PackagingReel
Part # AliasesSI7898DP-GE3
Pd - Power Dissipation1.9 W
Power Dissipation (Max)1.9W (Ta)
Product CategoryMOSFET
Product StatusActive
Rds On (Max) @ Id, Vgs85mOhm @ 3.5A, 10V
Rds On - Drain-Source R.85 mOhms
Rise Time10 ns
SeriesTrenchFET?
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Transistor PolarityN-Channel
Typical Turn-Off Delay .24 ns
Vds - Drain-Source Brea.150 V
Vgs (Max)?20V
Vgs - Gate-Source Break.20 V
Vgs(th) (Max) @ Id4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18099000.7425110Vishay/Siliconix0.7425 @ 10
Future Electronics90133911.272300010Vishay1.272 @ 3000
thumbzoomNewark72R42512.0114509VISHAY2.0 @ 10
thumbzoomDigi-Key19955812.4036114085Vishay Siliconix2.4036 @ 10
thumbzoomswatee.comSI7898DP-T1-GE33.9513793Vishay3.95 @ 10
prev


As an Amazon Associate I earn from qualifying purchases.

1759999909.6895