Goford Semiconductor G085P02TS

mpnG085P02TS
brandname: Goford Semiconductor
manufacturername: Goford Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	8.2A (Tc)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.8V, 4.5V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	29 nC @ 10 V
Input Capacitance (Ciss.	1255 pF @ 10 V
Mfr	Goford Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-TSSOP (0.173", 4.40mm.
Power Dissipation (Max)	1.05W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	8.5mOhm @ 4.2A, 4.5V
Series	-
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	0.9V @ 250?A

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