Attributes

Key Value
Channel TypeN
ConfigurationDual Drain
Dimensions10.67 x 4.83 x 9.65 mm
Drain Current36 A
Drain to Source On Resi.26.5 m?
Drain to Source Voltage100 V
Forward Transconductance36 V
Forward Voltage, Diode1.3 V
Gate to Source Voltage?20 V
Height0.38" (9.65mm)
Input Capacitance1770 pF @ 25 V
Length0.42" (10.67mm)
Maximum Operating Tempe.+175 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Package TypeTO-262
PolarizationN-Channel
Power Dissipation92 W
Product HeaderHexfet? Power MOSFET
SeriesHEXFET Series
Temperature Operating R.-55 to +175 ?C
Total Gate Charge42 nC
Turn Off Delay Time43 ns
Turn On Delay Time15 ns
Typical Gate Charge @ V.42 nC @ 10 V
Voltage, Breakdown, Dra.100 V
Width0.19" (4.83mm)
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