Attributes

Key Value
Base Product NumberMSCMC120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.742A (Tc)
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type2 N Channel (Phase Leg)
Gate Charge (Qg) (Max) .1932nC @ 20V
Input Capacitance (Ciss.33500pF @ 1000V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 175?C (TJ)
PackageTube
Package / CaseModule
Power - Max3200W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.85mOhm @ 600A, 20V
Series-
Supplier Device PackageSP6C LI
Vgs(th) (Max) @ Id4V @ 180mA
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