Attributes

Key Value
Current - Continuous Dr.5A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .52 nC @ 10 V
Input Capacitance (Ciss.1850 pF @ 25 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
Package / CaseTO-3P-3 Full Pack
Part Status-
Power Dissipation (Max)96W (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
Supplier Device PackageTO-3PF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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