Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
FET Type4 N-Channel
Gate Charge (Qg) (Max) .122.1nC @ 20V
Input Capacitance (Ciss.1505pF @ 800V
Mfronsemi
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 175?C (TJ)
PackageTray
Package / CaseModule
Power - Max74W (Tj)
Product StatusActive
Rds On (Max) @ Id, Vgs56mOhm @ 25A, 20V
Series-
Supplier Device Package22-PIM (33.8x42.5)
Vgs(th) (Max) @ Id4.3V @ 10mA
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