Toshiba Semiconductor and Storage TK9P65W,RQ

mpnTK9P65W,RQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	2SK3561
Category	Discrete Semiconductor .
Current - Continuous Dr.	9.3A (Ta)
Drain to Source Voltage.	650V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20nC @ 10V
Input Capacitance (Ciss.	700pF @ 300V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Discontinued at Digi-Key
Power Dissipation (Max)	80W (Tc)
Rds On (Max) @ Id, Vgs	560mOhm @ 4.6A, 10V
Series	DTMOSIV
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	3.5V @ 350?A

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