Attributes

Key Value
Base Product NumberSQ2309
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.7A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .8.5nC @ 10V
Input Capacitance (Ciss.265pF @ 25V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)2W (Tc)
Rds On (Max) @ Id, Vgs336mOhm @ 3.8A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackageTO-236 (SOT-23)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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