Attributes

Key Value
@Ic (A)500u
@VCE (test) (V)3.0
C(ob) (F)2.0p
CaseSOT23
Collector Capacitance (.2 pF
Derate (Amb) (W/?C)1.8m
Forward Current Transfe.30
hfe30
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)100n
ManufacturerSamsung
Max. Operating Junction.150 ?C
Max. PD (W)225m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.3 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.25 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-14
PolarityNPN
SKU663326
SMD Transistor CodeF1
Surface Mounted Yes/NoYES
Trans. Freq (Hz) Min.150M
Transition Frequency (f.150 MHz
TypeTransistor Silicon NPN
Vbr CBO50
Vbr CEO25
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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