Infineon IPP180N10N3GXKSA1

B082NX3LZH

Infineon Mosfet Transistor, N Channel, 43 A, 100 V, 0.0155 Ohm, 10 V, 2.7 V Rohs Compliant: Yes - IPP180N10N3GXKSA1

Infineon Mosfet Transistor, N Channel, 43 A, 100 V, 0.0155 Ohm, 10 V, 2.7 V Rohs Compliant: Yes - IPP180N10N3GXKSA1zoom

Attributes

Key Value
Base Product NumberIPP180
CasePG-TO220-3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.43A (Tc)
Drain current43A
Drain to Source Voltage.100 V
Drain-source voltage100V
Drive Voltage (Max Rds .6V, 10V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.1800 pF @ 50 V
Kind of channelenhanced
Kind of packagetube
ManufacturerInfineon Technologies
MfrInfineon Technologies
MountingTHT
Mounting TypeThrough Hole
On-state resistance18m?
Operating Temperature-55?C ~ 175?C (TJ)
Packagetube
Package / CaseTO-220-3
Part StatusActive
Polarisationunipolar
Power dissipation71W
Power Dissipation (Max)71W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs18mOhm @ 33A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide), O.
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 33?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics40647140.95450025Infineon0.954 @ 500
thumbzoomNewark85X60391.0411489INFINEON1.04 @ 25
thumbzoomTMEIPP180N10N3GXKSA11.059125INFINEON TECHNOLOGIES1.059 @ 25
Digi-Key27835821.6896125Infineon Technologies1.6896 @ 25
RS Delivers892-23181.7664125Infineon1.7664 @ 25
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