Attributes

Key Value
Base Product NumberIXTN110
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .500 nC @ 10 V
Input Capacitance (Ciss.23000 pF @ 25 V
MfrIXYS
Mounting TypeChassis Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)735W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 55A, 10V
SeriesLinear L2?
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 3mA
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