Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.59 nC @ 10 V
Drive Voltage (Max Rds .1.55Ohm @ 2.6A, 10V
FET Feature107W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .2280 pF @ 25 V
MfrON Semiconductor
Mounting TypeTO-3PF
Operating TemperatureThrough Hole
PackageObsolete
Package / Case900 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs5V @ 250?A
SeriesTube
Supplier Device PackageTO-3P-3 Full Pack
Technology5.2A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?30V
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