Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .16 nC @ 10 V
Input Capacitance (Ciss.750 pF @ 20 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)1W (Ta), 23W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs51mOhm @ 10A, 10V
Series-
Supplier Device PackageIPAK/TP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.6V @ 1mA
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