Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
DescriptionMOSFET N-CH 600V 11A 4L.
Detailed DescriptionN-Channel 600 V 11A (Ta.
Digi-Key Part NumberRJK6013DPE-WS#J3-ND - T.
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .37.5 nC @ 10 V
Input Capacitance (Ciss.1450 pF @ 25 V
ManufacturerRenesas Electronics Ame.
Manufacturer Product Nu.RJK6013DPE-WS#J3
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C
PackageTape & Reel (TR)
Package / CaseSC-83
Power Dissipation (Max)100W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs700mOhm @ 5.5A, 10V
Series-
Supplier Device PackageLDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 1mA
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