Attributes

Key Value
Base Product NumberSTD50N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.24V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .24nC @ 10V
Input Capacitance (Ciss.1400pF @ 25V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)60W (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 25A, 10V
SeriesSTripFET? III
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.8V @ 250?A
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