Attributes

Key Value
Base Product NumberSTW29N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.29A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .200 nC @ 10 V
Input Capacitance (Ciss.6450 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)350W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs130mOhm @ 14.5A, 10V
SeriesSuperMESH?
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 150?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760012806.2049