Attributes

Key Value
Base Product NumberIPP040N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A (Ta), 115A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .81 nC @ 10 V
Input Capacitance (Ciss.3800 pF @ 40 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)3.8W (Ta), 150W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs4mOhm @ 80A, 10V
SeriesStrongIRFET? 2
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.8V @ 85?A
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