Infineon Technologies IRF6725MTR1PBF

mpnIRF6725MTR1PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	28A (Ta), 170A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	54 nC @ 4.5 V
Input Capacitance (Ciss.	4700 pF @ 15 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	DirectFET? Isometric MX
Power Dissipation (Max)	2.8W (Ta), 100W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2.2mOhm @ 28A, 10V
Series	HEXFET?
Supplier Device Package	DIRECTFET? MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.35V @ 100?A

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