Attributes

Key Value
Base Product NumberIXFP6N120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
DescriptionMOSFET N-CH 1200V 6A TO.
Detailed DescriptionN-Channel 1200 V 6A (Tc.
Digi-Key Part NumberIXFP6N120P-ND
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .92 nC @ 10 V
Input Capacitance (Ciss.2830 pF @ 25 V
ManufacturerIXYS
Manufacturer Product Nu.IXFP6N120P
Manufacturer Standard L.61 Weeks
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)250W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.4Ohm @ 500mA, 10V
SeriesHiPerFET?, Polar
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 1mA
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