mpn
2SD855B
brand
name: Matsushita Electronics
manufacturer
name: Matsushita Electronics
Attributes
Key
Value
@Ic (test) (A)
0.2
@VCE (V)
4.0
Case
SOT78
Derate Above 25?C
240m
Forward Current Transfe.
40
Ic Max. (A)
1.0
Icbo Max. @Vcb Max. (A)
300u
Manufacturer
Matsushita Electronics
Max. hFE
450
Max. Operating Junction.
150 ?C
Max. PD (W)
30
Maximum Collector Curre.
1 A
Maximum Collector Power.
30 W
Maximum Collector-Base .
100 V
Maximum Collector-Emitt.
60 V
Maximum Emitter-Base Vo.
5 V
Min hFE
40
Oper. Temp (?C) Max.
140
Pinout Equivalence Numb.
3-15
Polarity
NPN
SKU
550837
Surface Mounted Yes/No
NO
Tr Max. (s)
1.2u
Type
Transistor Silicon NPN
Vbr CBO
100
Vbr CEO
100