Nexperia USA Inc. PMV65XP/MIR

mpnPMV65XP/MIR
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	2.8A (Ta)
Drain to Source Voltage.	20V
Drive Voltage (Max Rds .	1.8V, 4.5V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	7.7nC @ 4.5V
Input Capacitance (Ciss.	744pF @ 20V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Obsolete
Power Dissipation (Max)	480mW (Ta), 4.17W (Tc)
Rds On (Max) @ Id, Vgs	74mOhm @ 2.8A, 4.5V
Series	-
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?12V
Vgs(th) (Max) @ Id	900mV @ 250?A

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